English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
N25Q032A13ESF40F TRFlip Electronics |
IC FLSH 32MBIT SPI 108MHZ 16SOP2 |
|
PC28F512M29EWL0Micron Technology |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MT47H256M4B7-37E:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
CY7C1441AV33-133AXITCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
AT25128A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 20MHZ 8DIP |
|
MT53D384M32D2DS-053 AAT:C TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
MT42L16M32D1LG-25 FAAT:AMicron Technology |
IC DRAM 512MBIT PAR 168WFBGA |
|
W25Q16JVSNJQ TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
DS1609S-50+Maxim Integrated |
IC SRAM 2KBIT PARALLEL 24SOIC |
|
IS42S32400D-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
W632GG6KB-11 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
7130SA35JRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IS46TR16640BL-107MBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
