类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (4M x 8, 2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 60 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL064P0XMFI001MCypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
IS46DR81280C-3DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
MT47H32M16HR-25E L:GMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
IS42SM16400K-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
S25FL132K0XMFA011Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD I/O 8SO |
|
7026S55JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
AT28LV256-25JIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
N25Q128A11ESF40F TRMicron Technology |
IC FLASH 128MBIT SPI 108MHZ 16SO |
|
71V35761S183BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
25AA040/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 1MHZ 8SOIC |
|
IDT71V67602S133BQGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
FT24C128A-UTR-TFremont Micro Devices |
IC EEPROM 128KBIT I2C 8TSSOP |
|
IDT71T75602S200PFIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |