类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (32M x 4) |
内存接口: | SPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 8ms, 5ms |
访问时间: | - |
电压 - 电源: | 1.7V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V35761S183BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
25AA040/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 1MHZ 8SOIC |
|
IDT71V67602S133BQGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
FT24C128A-UTR-TFremont Micro Devices |
IC EEPROM 128KBIT I2C 8TSSOP |
|
IDT71T75602S200PFIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS61LPS51236A-200B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT29LV256-15JC-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32PLCC |
|
MT48V4M32LFB5-10:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IDT71V67903S85PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CAT28C64BL90Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
W631GG8KB-12 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
AT24C1024W-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
W631GU6KB-11Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |