类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.6 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 208-BFQFP |
供应商设备包: | 208-PQFP (28x28) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB321C-TCRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI 40MHZ 28TSOP |
|
MT29F1G08ABCHC-ET:CMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
DS2045Y-70#Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 256BGA |
|
AT49BV002NT-12JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IS42S16800E-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C1041CV33-12BAXETCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48FBGA |
|
AT49BV002-12TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
MT49H16M36SJ-25 IT:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
W25Q40EWSSIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
AT93C46A-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AT49BV001T-90JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IDT71V3558S133PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
FT24C128A-USR-TFremont Micro Devices |
IC EEPROM 128KBIT I2C 1MHZ 8SOP |