CACHE TAG SRAM, 64KX4, 19NS
IC SRAM 1MBIT PARALLEL 44TSOP II
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C04A-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |
|
IS61NVF102418-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
7132SA25JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
W631GU6KS-12Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
AT24C64D-SSPD-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
IDT71V016SA20PHRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
W29N01GVBIAAWinbond Electronics Corporation |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
W25Q32FVZPIGWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
M29DW256G70NF6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS61VPD51236A-250B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
IS46DR16128A-3DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84LFBGA |
|
M29W640GL70NA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
IDT71T75902S80PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |