类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-VDFN Exposed Pad |
供应商设备包: | 8-MAP (3x4.9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT25QU01GBBB8ESF-0SITMicron Technology |
IC FLASH 1GBIT SPI 166MHZ 16SOP2 |
|
93C86B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
IDT71V416YS12YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
RC28F128J3D75B TRMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
AS4C4M16S-6TINAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 54TSOP II |
|
7024S15PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT48V8M32LFF5-8Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
MT25QU128ABA1ESF-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 16SO |
|
CAT24C01WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
MT47H128M4CF-187E:GMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
M29W400DB55N6Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
MT29F4G16ABCWC:C TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
PC28F256P33B85EMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |