类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 32-DIP (0.600", 15.24mm) |
供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL127SABMFIZ03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
IS43TR82560BL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
DS1230YP-70Maxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
IS42S32400B-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AT29LV256-20TC-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 28TSOP |
|
FT93C66A-ISR-BFremont Micro Devices |
IC EEPROM 4KBIT SPI 2MHZ 8SOP |
|
IDT71V416YL15PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS42S16400F-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
70V9269L12PRFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
IDT71V3556S166BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT25QL01GBBA8E12E01-2SIT TRMicron Technology |
IC FLSH 1GBIT SPI 133MHZ 24TPBGA |
|
IS61LV6416-10KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
RC28F640P33BF60AMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |