类型 | 描述 |
---|---|
系列: | e•MMC™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 64Gb (8G x 8) |
内存接口: | MMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 153-VFBGA |
供应商设备包: | 153-VFBGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7143LA25PF8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
IS62WV5128DBLL-45HLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32STSOP I |
|
7007S15PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
AT49LV040-90VIRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32VSOP |
|
MT46H32M16LFBF-6 IT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
IS25WP032A-JLLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
AT49F001-55VCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
IDT71V016SA10YGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
THGBMHG9C8LBAWGToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 512GBIT EMMC 153WFBGA |
|
MT48LC32M8A2TG-75:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
7006S25PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
IDT71V3556S133BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S34MS01G200GHI003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 67BGA |