类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-FBGA |
供应商设备包: | 78-FBGA (9x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61LV6416-10KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
M29W256GL70ZA6EMicron Technology |
IC FLASH 256MBIT PARALLEL 64TBGA |
|
AT24C01C-SSPD-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8SOIC |
|
CY7C028V-20AXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT46V64M8P-5B L IT:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
S29GL256P11TFIV13Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS42S16320B-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
S29GL128P10FFIS30Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MT46V32M16P-6T:CMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
PCF85116-3T/01,112NXP Semiconductors |
IC EEPROM 16KBIT I2C 400KHZ 8SO |
|
M29W640GH70ZF6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64TBGA |
|
W25Q128BVEIGWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IDT70824S35PF8Renesas Electronics America |
IC RAM 64KBIT PARALLEL 80TQFP |