English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 3ms |
| 访问时间: | 120 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V424L12PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT49F516-70VIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 40VSOP |
|
AT27C2048-70PIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 40DIP |
|
IDT71P73804S167BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS42S32200C1-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
AS4C32M16D2-25BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84TFBGA |
|
IDT71V416VL12YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
NAND256W3A0AN6STMicroelectronics |
IC FLASH 256MBIT PARALLEL 48TSOP |
|
MT47H32M16CC-3:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MT46V32M4P-6T:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
CY7C1049CV33-15ZSXETCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
NAND16GW3F2AN6EMicron Technology |
IC FLASH 16GBIT PARALLEL 48TSOP |
|
MT46H32M32LFB5-5 IT:BMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
