类型 | 描述 |
---|---|
系列: | GL-P |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28BV16-30PIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
IS42S32200E-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
MT45W2MW16PGA-70 WT TRMicron Technology |
IC PSRAM 32MBIT PARALLEL 48VFBGA |
|
AT29BV040A-20JURoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
IDT71V3557SA75BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS43LD32320A-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
AT49F002N-55TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
IDT71V2558S133PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT47H64M16HR-25:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
AT27BV512-90TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
W25X40VZPIG T&RWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 75MHZ 8WSON |
|
IS29GL512S-11DHB020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
STK14CA8-RF35TRCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |