类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 1.152Mb (128K x 9) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C64B-15SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
AS4C64M16D2-25BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
M24C08-RDS6TGSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
CY7C008V-25AXCCypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT41K512M16HA-107 IT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
IS62WV5128DBLL-45HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32STSOP I |
|
PC28F640P30BF65B TRFlip Electronics |
IC FLASH 64MBIT PAR 64EASYBGA |
|
IS42RM16160D-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
W25Q128JVBJMWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
MT46V128M4P-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
RMLV1616AGSD-5S2#HA1Renesas Electronics America |
IC SRAM 16MBIT PAR 52TSOP II |
|
M93S46-MN6TSTMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8SO |
|
93C66AT-E/OT15KVAORoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ SOT23-6 |