类型 | 描述 |
---|---|
系列: | GL-N |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (4M x 8, 2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 110ns |
访问时间: | 110 ns |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46V8M16P-6T L:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
IDT71P73604S250BQRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IDT71V416L10BEGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
IDT71V65603ZS133PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT27C4096-90JIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
AT24C256N-10SU-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
IS61DDB41M36A-300M3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT28F004B3VG-8 TETMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP I |
|
IS41LV16105B-50TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
|
AT25640T2-10TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 20TSSOP |
|
7025L15PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
MT45W4MW16BCGB-708 WTMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
W632GG8MB-12 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |