English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 8ms, 2.8ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA |
| 供应商设备包: | 24-T-PBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C512C-SSHMEU-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
7005L25PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
DS1225Y-200IND+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
AT24C64AW-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
AT27C256R-12PARoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28DIP |
|
CY7C1021BNV33L-15VXCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS43DR16128B-3DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
MT29F1T208ECCBBJ4-37:BMicron Technology |
IC FLASH 1.125T PAR 132VBGA |
|
M25PX32-VMP6FBA TRMicron Technology |
IC FLASH 32MBIT SPI 75MHZ 8VDFPN |
|
IS42S32800B-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
AS4C512M8D3LA-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
CY7C1270V18-400BZCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
W25Q128FVSJQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
