English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F2G08ABBEAH4:EMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
IS25LP256D-RGLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SERIAL 24TFBGA |
|
AT93C66W-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
W25X20AVSNIGWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 100MHZ 8SOIC |
|
AT24C512BW-SH-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
IS61NLF25636A-7.5B2IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IS42S16100F-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT28HC256-12PCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
MT46V32M8FG-75:GMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
S-93C66CD0H-K8T2U3ABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ 8TMSOP |
|
AT24C128W-10SCRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
MT45W4MW16BFB-706 WTMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
AT24C04-10PIRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
