







CRYSTAL 38.4000MHZ 5PF SMD
MOSFET N-CH 650V 7A DPAK
MOSFET N-CH 250V 100A TO268
IC SRAM 256KBIT PARALLEL 80TQFP
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 80-LQFP |
| 供应商设备包: | 80-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS45S32400E-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
|
S29CL016J0PQFM020Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
|
|
FT24C04A-KMR-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8MSOP |
|
|
AT24C128B-PURoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8DIP |
|
|
MT29F256G08CMCABH2-10Z:AMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
|
AT24C256-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
|
W25Q80JVSSIQ TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 133MHZ 8SOIC |
|
|
M36W432T85ZA6TSTMicroelectronics |
IC FLASH 32MBIT PARALLEL 66LFBGA |
|
|
AT24C64-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
|
BR95040-WDS6TPROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8TSSOP |
|
|
RC28F00AM29EWLAMicron Technology |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
|
IDT71V416VS12BEI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
|
S29GL512S11FHA023Cypress Semiconductor |
IC FLASH 512MB FLASH NOR 64FBGA |