类型 | 描述 |
---|---|
系列: | - |
包裹: | Box |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 256Mb (32M x 8) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 750 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-FBGA |
供应商设备包: | 60-FBGA (8x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX29GL640EBTI-90GMacronix |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
IDT71V256SA15YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT29F2G01AAAEDH4:EMicron Technology |
IC FLASH 2GBIT SPI 63VFBGA |
|
IS43TR16512AL-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
AT24C512-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
SST25WF040-40-5I-QAE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WSON |
|
IS43DR82560B-25EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
S29GL064S80FHIS30Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W25X80VSFIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 75MHZ 16SOIC |
|
AS4C512M8D3L-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
70P3519S200BCGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
MT46H64M32LFBQ-48 AIT:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
MT48LC8M16A2B4-6A AIT:LMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |