English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.1 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V65802S150BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IS66WV51216EBLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PARALLEL 48TFBGA |
|
MT28FW01GABA1LJS-0AAT TRMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
AT25040N-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8SOIC |
|
7008S15PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT41J128M16HA-125G:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
S29GL128P90DFSS80Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
W632GG6MB12IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
CY7C025AV-20ACCypress Semiconductor |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
AT93C86-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8DIP |
|
70V9279L7PRFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
AT29BV010A-12JURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IS42S32200E-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
