English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 90 ns |
| 电压 - 电源: | 3V ~ 3.6V, 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-SOIC (0.342", 8.69mm Width) |
| 供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT27BV256-12RIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
RM3316-SNI-TAdesto Technologies |
IC EEPROM 256KBIT SPI 1MHZ 8SOIC |
|
AT27C512R-45TIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
IS61DDB21M36C-300M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
CAT25640YI-GT3JNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT SPI 8TSSOP |
|
AS4C32M16SA-7TCNAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
IS41LV16100B-50TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
|
IDT71256SA20PZ8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
CY7C1360C-166AXITCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
W25Q16JWSVIQWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8VSOP |
|
7134LA20PRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48DIP |
|
CY7C131-15JXCCypress Semiconductor |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
AT28BV64-25TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
