English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 18Mb (256K x 72) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4 ns |
| 电压 - 电源: | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 256-LBGA |
| 供应商设备包: | 256-FBGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SST39LF020-45-4C-MMERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 34WFBGA |
|
IDT71V35761S166BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT24C16A-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
IDT71256SA20PZIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
U6264BS2C07LLG1TRAlliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28SOP |
|
MT28F400B3SG-8 BMicron Technology |
IC FLASH 4MBIT PARALLEL 44SOP |
|
AT28HC256E-90SCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
MT46V32M16TG-5B:FMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IS61NLF51236-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT29F128G08CFAABWP-12Z:A TRMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
7130SA55JI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
70V9279L7PRFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
MX29LV800CTXEI-45QMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
