类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 200µs |
访问时间: | 200 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V25761SA166BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
SST39VF512-70-4I-WHE-TRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
IDT71V256SA10YIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
M25P32-VMW6GBAMicron Technology |
IC FLASH 32MBIT SPI 75MHZ 8SO |
|
AT93C57-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
DS2502R+00BMaxim Integrated |
IC EPROM 1KBIT 1-WIRE SOT23-3 |
|
AT28C256-15UM/883-610Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
IS42S16160B-7T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT46V16M16CY-5B AAT:MMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
SST39VF010-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 48TFBGA |
|
MT45W1MW16BDGB-701 WT TRMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
IDT71V256SA10PZGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
MT46V32M16FN-75 L:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |