English
简体中文
CAP CER 18PF 50V C0G/NP0 2225
IC SOC MODULE 1GB DDR3L
IC SRAM 256KBIT PARALLEL 28TSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT46V32M16FN-75 L:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
S25FL132K0XMFV043Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
W631GG8KB15IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
TE28F160C3BD70AMicron Technology |
IC FLSH 16MBIT PARALLEL 48TSOP I |
|
709089S15PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
DS1330WP-100INDMaxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
JS28F256P33T95AMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
M25P20-VMP6TGB TRMicron Technology |
IC FLASH 2MBIT SPI 75MHZ 8VFQFPN |
|
IS62WV25616DBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
JS28F512P33EFAMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
70V9369L6PFRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
S25FS064SAGMFB010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
MT29F256G08CKCABH2-12:A TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |