类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F1G08ABAEAH4-ITX:EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
MT53D384M32D2DS-053 AUT:CMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
IS61NVP51236-250B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT49BV002N-12TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AT27C1024-45JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 44PLCC |
|
W25Q32JVXGJQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8XSON |
|
MT41J64M16JT-15E XIT:GMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
IS62WV25616DALL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
STK12C68-L35ICypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28LCC |
|
IDT71V424S12YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
AT25320W-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
71024S25TYGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
N01L83W2AN25ITSanyo Semiconductor/ON Semiconductor |
IC SRAM 1MBIT PARALLEL 32STSOP I |