类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | PSRAM |
技术: | PSRAM (Pseudo SRAM) |
内存大小: | 32Mb (2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F256G08CMCGBJ4-37R:GMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
AT24C08C-MAPD-ERoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8UDFN |
|
NAND04GW3C2BN6EMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
AT24C16AY1-10YU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8MAP |
|
IDT71P74804S250BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
MT49H8M36FM-25 IT:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
7130LA35PRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
AT49BV321-11CIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IS43R83200B-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
W25X16AVSSIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI 75MHZ 8SOIC |
|
MT28EW256ABA1LPC-1SIT TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
BR93C86-WDW6TPROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8TSSOP |
|
MT46V64M8BN-6:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |