English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 105°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TE28F256J3D95AMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
RM25C128A-BSNC-TAdesto Technologies |
IC CBRAM 128KBIT SPI 5MHZ 8SOIC |
|
M24C64-FDW5TPSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
JS28F00AP33BFAMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
AT24C64AN-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
IS61QDB41M36A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
RC28F640P33B85AMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
R1LV0108ESA-7SI#B0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
R1RW0416DGE-2PR#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V3557SA85BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT24C01-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
AT27C256R-45RIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
AT49F001-90JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
