类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Kb (64K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 800µs |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL164K0XMFV003Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
AS4C512M8D3LB-12BANTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IS46TR16128A-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
IDT71V65903S85PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT26F004-SUAdesto Technologies |
IC FLASH 4MBIT SPI 33MHZ 8SOIC |
|
MT29F4G08AACHC:CMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
TE28F128J3D75AMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT29C1G12MAAIYAMR-5 AITMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
|
IS43TR16128B-093NBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
W25Q256JVFJMWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
IS49NLC18320-25EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
MT48LC8M32B2TG-7 TRMicron Technology |
IC DRAM 256MBIT PAR 86TSOP II |
|
IS49NLC18320-25EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |