类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 667 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL132K0XNFIQ13Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
EDY4016AABG-DR-F-DMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IDT71016S15PHRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AT27LV010A-90TIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
70V07L35PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
W25Q80BLSVIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8VSOP |
|
AT24C64AY1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8MAP |
|
MTFC32GJDED-3M WT TRMicron Technology |
IC FLASH 256GBIT MMC 169VFBGA |
|
R1LP5256ESP-5SI#B0Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
MT47H128M16PK-25E IT:CTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 84FBGA |
|
70914S25PFRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
AT49F001A-55JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT25010-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8DIP |