类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 2.4V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-miniBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT93C46A-10PI-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
IS61LV2568L-8TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AT29C257-12JCRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32PLCC |
|
IS42S16100C1-7TIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71P71604S250BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
S25FL164K0XBHVS20Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
IDT71P74604S200BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
MT41K256M8DA-125 AIT:KMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
AT25010-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8DIP |
|
AS4C32M16MD1-5BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
N25Q00AA13G1240EMicron Technology |
IC FLSH 1GBIT SPI 108MHZ 24LPBGA |
|
IS43TR85120AL-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
IS42S16160D-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |