类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (4M x 32) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STK22C48-SF45ICypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
R1LV0108ESF-5SR#S0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
IDT71256SA15YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
NM27C512V150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
FT24C256A-EDR-BFremont Micro Devices |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
MT48H16M32LFCM-75:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
IS61VPD51236A-200B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
IS42S32200L-6BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
S29PL127J70BAI003Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 80FBGA |
|
W25Q80BVDAIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8DIP |
|
MT29F1G08ABAEAWP:EMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
7024S35J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
W25Q64JVZPJQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |