类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 2Mb (256K x 8) |
内存接口: | SPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 1ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 1.95V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71T75602S150PF8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT40A256M16GE-083E AIT:BMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AS4C32M16SA-7TCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
IDT6116SA15TPRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |
|
IS25LQ016-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
IS42S32800D-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
IS25LQ010B-JDLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT SPI/QUAD 8TSSOP |
|
TC58CVG2S0HRAIGToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT SPI 104MHZ 8WSON |
|
M25P64-VMF6PBAMicron Technology |
IC FLASH 64MBIT SPI 75MHZ 16SO W |
|
AT28HC256E-12SIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
AT24C02B-PURoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8DIP |
|
W25Q128FVSIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
MX25L12835EMI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 16SOP |