类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 120 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C02B-PURoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8DIP |
|
W25Q128FVSIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
MX25L12835EMI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 16SOP |
|
AT28C16E-15PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
AT24C04N-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
SST25VF080B-80-4C-SAERoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |
|
MT47H128M8B7-5E:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
70V9279S7PRFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
MT46V16M16P-5B AIT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS25WD040-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 80MHZ 8SOIC |
|
W25Q256FVEIFWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
IDT71V124SA20YG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IDT71V424L10YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |