类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (16M x 32) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-LFBGA |
供应商设备包: | 90-LFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT29C020-90JU-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IS46TR16640C-125JBLA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT45DB021B-TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 20MHZ 28TSOP |
|
CY7C1318BV18-278BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
NM24C08MSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 14SOIC |
|
70V9279L9PRFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
MT40A512M16JY-083E AUT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
AS4C512M8D3LA-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
AT24C1024BN-SH25-BRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
CY7C1399BNL-15ZXCTCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
AT27BV256-12TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
NM93C56LZNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 250KHZ 8DIP |
|
IDT71V65603S100PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |