类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 288Mb (8M x 36) |
内存接口: | Parallel |
时钟频率: | 300 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 144-TFBGA |
供应商设备包: | 144-FCBGA (11x18.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46H32M32LFJG-5 IT:AMicron Technology |
IC DRAM 1GBIT PARALLEL 168VFBGA |
|
IDT71V3557S80BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT29F1G16ABBDAH4:DMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IS43LR32800F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
AT27BV020-15JIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
AT28HC256F-70PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
X28HC256JI-90R5420Intersil (Renesas Electronics America) |
IC EEPROM 256KBIT PAR 32PLCC |
|
W25X40BVSSIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
AT28BV256-20TIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
CY14MB064Q1B-SXITCypress Semiconductor |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
CY7C1313SV18-250BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
23LCV512T-E/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/DL 8TSSOP |
|
W972GG6JB-3IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 84WBGA |