English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 128Kb (16K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LQFP |
| 供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C4M16D1A-5TANAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |
|
AT29C512-70PIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
IS42S16800E-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
S-93C46BD0I-D8S1GABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
71342SA35JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
M29DW256G70NF6EMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IDT71V3556S100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT49F512-55VIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32VSOP |
|
MT46V128M4TG-75E:DMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
AS4C512M8D3A-12BINTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
W25Q64FVTCIPWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
AT49LV001-90VIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
CY62137VLL-70ZXECypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
