English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 24-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V3559S85PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61LF51236A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS42S32160D-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
N25W128A11EF740F TRMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
|
CAT28C64BLI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
IDT71V016SA15PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
R1EX24512BSAS0I#S0Renesas Electronics America |
IC EEPROM 512KBIT I2C 1MHZ 8SOP |
|
AT25640AY1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 20MHZ 8MAP |
|
MT29F256G08CMHGBJ4-3RES:G TRMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
NAND08GW3C2BN6EMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP |
|
74F189PCSanyo Semiconductor/ON Semiconductor |
IC RAM 64B PARALLEL 16DIP |
|
AT27BV020-90VCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32VSOP |
|
IDT71V3557SA85BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
