English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MX25L12835EZNI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 8WSON |
|
MX30UF4G18AC-TIMacronix |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
W632GG8MB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
70914S20PFRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
MT46H128M32L2KQ-5 IT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 168WFBGA |
|
IS61VF102418A-6.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IS42SM16800E-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IS66WVE1M16EBLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 16MBIT PARALLEL 48TFBGA |
|
MT48H8M16LFB4-6:K TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IS45S32200E-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
AT28LV256-25PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
SST25PF040CT-40E/NP18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8USON |
|
SST25VF040B-80-4I-SAERoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 80MHZ 8SOIC |
