类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 3.5 µs |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT28F008B5VG-8 TETMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
M25P40-VMP6TGBO2 TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8VDFPN |
|
IS41LV16100C-50KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
AT25020AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8MAP |
|
IS43LD16640A-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
IS61LPS51236A-250B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
M25PX64SOVZM6TP TRMicron Technology |
IC FLSH 64MBIT SPI 75MHZ 24TPBGA |
|
AS4C256M8D3LA-12BANTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
N25Q064A11ESF40GMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 16SO W |
|
IS49NLS93200-25BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
AT49BV001ANT-55TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
DS1265W-100+Maxim Integrated |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
|
MT46V64M8FN-6:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |