类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 128Mb (4M x 32) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PC28F256J3F95AMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
24AA00/STRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8TSSOP |
|
DS1258Y-70Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
70V5388S133BGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 272PBGA |
|
AS4C256M16D3LB-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AS4C2M32S-6TINTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
IDT71T75702S80BGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
M27C512-70XF1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28CDIP |
|
AT24C21-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 100KHZ 8DIP |
|
IS42S32400B-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
S29AL016J55TFA020Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
PC28F256P33B85B TRMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
AT24C04N-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |