English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MXSMIO™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字，页: | 300µs, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA, CSPBGA |
| 供应商设备包: | 24-CSPBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT53B2DBDS-DCMicron Technology |
IC DRAM 6GBIT 200WFBGA |
|
MT29F64G08AEAAAC5-Z:A TRMicron Technology |
IC FLASH 64GBIT PARALLEL 52VLGA |
|
IS43DR16160A-5BBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
S34ML08G101TFB000SkyHigh Memory Limited |
IC FLASH 8G PARALLEL 48TSOP I |
|
CY14MB064Q2A-SXITCypress Semiconductor |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
CAT28F001G-12TTSanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
70V7319S166BCGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
IDT709389L7PF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
CY7C1021CV33-10VXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
AT27C040-70PIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32DIP |
|
N25Q512A83G12H0F TRMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
MT42L16M32D1LG-25 AAT:AMicron Technology |
IC DRAM 512MBIT PAR 168WFBGA |
|
MT48H8M16LFB4-8:JMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
