类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT28F001G-12TTSanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
70V7319S166BCGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
IDT709389L7PF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
CY7C1021CV33-10VXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
AT27C040-70PIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32DIP |
|
N25Q512A83G12H0F TRMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
MT42L16M32D1LG-25 AAT:AMicron Technology |
IC DRAM 512MBIT PAR 168WFBGA |
|
MT48H8M16LFB4-8:JMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IS42S16800E-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
AT25160N-10SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
AT93C57W-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
93C76AT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |
|
RC28F256J3D95AMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |