类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M45PE10-VMP6TG TRMicron Technology |
IC FLASH 1MBIT SPI 75MHZ 8VDFPN |
|
S25FL129P0XBHI303Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
W971GG8KB-25Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 60WBGA |
|
IS46TR16640AL-125JBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
S29PL127J60TAW133Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT46V32M16BN-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
STK22C48-SF45Cypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
70V08L25PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
M25PE40-VMP6TG TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8VDFPN |
|
93AA86AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
MT49H8M36FM-25 TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
W632GU8NB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
IDT71P73604S200BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |