类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 24-DIP (0.300", 7.62mm) |
供应商设备包: | 24-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1370D-200AXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V25761YSA183BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48LC32M8A2P-6A:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT49F8192A-90TIRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
IDT71V25761S183PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AK6416CHAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KBIT SPI 5MHZ 8MSOP |
|
W25Q80BWZPIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8WSON |
|
N25Q032A13EF840F TRMicron Technology |
IC FLSH 32MBIT SPI 108MHZ 8VDFPN |
|
MT53B384M32D2DS-062 AUT:B TRMicron Technology |
IC DRAM 12GBIT 1600MHZ 200WFBGA |
|
AT24C02C-XPD-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
MX29GL512FDXFI-12GMacronix |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
IS61DDB22M18C-250B4LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
AT27LV020A-12VIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32VSOP |