类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 2Mb (256K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 32-DIP (0.600", 15.24mm) |
供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M25P40-VMN6TPBA TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8SO |
|
7027L55PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
AT45DB021-JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 5MHZ 32PLCC |
|
MT41K512M8RH-125 M AIT:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IDT71V2556S166PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT48LC8M32LFF5-10Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
AT24C01A-10PU-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
W25X10VZPIG T&RWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 75MHZ 8WSON |
|
MT29F256G08CJAAAWP:A TRMicron Technology |
IC FLASH 256GBIT PAR 48TSOP I |
|
IS64WV25616EDBLL-10BA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
MT29F1G16ABBDAH4-ITX:DMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
MT48LC2M32B2P-6:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
S25FL116K0XWEI009Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 16SOIC |