English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 2Mb (264 Bytes x 1024 pages) |
| 内存接口: | SPI |
| 时钟频率: | 5 MHz |
| 写周期时间 - 字，页: | 14ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT41K512M8RH-125 M AIT:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IDT71V2556S166PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT48LC8M32LFF5-10Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
AT24C01A-10PU-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
W25X10VZPIG T&RWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 75MHZ 8WSON |
|
MT29F256G08CJAAAWP:A TRMicron Technology |
IC FLASH 256GBIT PAR 48TSOP I |
|
IS64WV25616EDBLL-10BA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
MT29F1G16ABBDAH4-ITX:DMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
MT48LC2M32B2P-6:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
S25FL116K0XWEI009Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 16SOIC |
|
IS61DDB42M18-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT46V32M16CY-5B L IT:JMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CY7C144-55JXCTCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 68PLCC |
