类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB011B-XCRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 20MHZ 14TSSOP |
|
AT27C020-12PIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32DIP |
|
IDT71V3558S166BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48LC32M8A2BB-6A:GMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
93C86A-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
7130LA25JI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IDT71V424S10YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
IS42S32800D-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IDT71124S20YI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS25CD010-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT SPI 100MHZ 8SOIC |
|
MT29F128G08CBEABH6-12:AMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
CY62157EV18LL-45BVXITCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
IS49NLS18160-33BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |