English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4.2 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V416VL15BE8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
AT25160AN-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
70V25S55JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
AS4C32M16SA-7TINAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
AT25128T2-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 20TSSOP |
|
MT53B256M32D1DS-062 AAT:CMicron Technology |
IC DRAM 8GBIT 1600MHZ 200WFBGA |
|
IS61NLF102418-7.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71T75702S75BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
W25X32VSSIG T&RWinbond Electronics Corporation |
IC FLASH 32MBIT SPI 75MHZ 8SOIC |
|
BR24G128-3ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8DIP |
|
S25FL164K0XNFI010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
MT46V64M4TG-75:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS61LV25616AL-10K-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44SOJ |
