类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT41J128M16HA-107G:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
S25FL128P0XMFI003SCypress Semiconductor |
IC FLASH 128MBIT SPI 16SOIC |
|
CY7C1570V18-375BZXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS61NVP102418-200B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V65802S133PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
N25Q032A11ESF40GMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 16SO |
|
AT93C66A-10TU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
MT48H16M32L2B5-8 ITMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
MT41K512M8RH-125 AAT:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
7006L55PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
IS61VPS51236A-250B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
R1LV0808ASB-5SI#B0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
W25Q64JVXGJQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8XSON |