类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT29C010A-90TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
MT40A512M8HX-083E:AMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
AT24C64AN-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
S25FS064SAGMFM013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
IDT71T75902S75BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
MT29F2G01AAAEDH4-ITX:EMicron Technology |
IC FLASH 2GBIT SPI 63VFBGA |
|
MT29F256G08EECBBJ4-10ES:B TRMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
W25X10BVSNIGWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 104MHZ 8SOIC |
|
W25Q80BVDAIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8DIP |
|
MT48LC4M32B2F5-6:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
M93C46-BN6STMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
IS29GL512S-11TFV020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
71342SA55JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |