类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-LFBGA |
供应商设备包: | 48-BGA (7x7) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
AT25FS010N-SH27-BRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 50MHZ 8SOIC |
![]() |
S29CD016J0PFFM113Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80FBGA |
![]() |
RMWV6416AGSD-5S2#HA0Renesas Electronics America |
IC SRAM 64MBIT PAR 52TSOP II |
![]() |
S29WS512PABBFW000Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 84FBGA |
![]() |
MT47H64M16HR-25E L:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
![]() |
R1LV0816ABG-7SI#S0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48FBGA |
![]() |
IS43TR85120A-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
![]() |
MT48H4M16LFB4-8 IT TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
![]() |
AT29C512-15JIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
![]() |
IS41LV16105B-50TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
![]() |
IS42S32400B-7T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
![]() |
IS62WV12816DBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
![]() |
IS49NLC18320-33BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |