English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 32-sTSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F4G08ABADAH4-ITX:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
W632GG6MB-15Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
AT24C11N-10SU-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8SOIC |
|
MT29C4G48MAZBBAKS-48 ITMicron Technology |
IC FLASH 4GB LPDDR 137VFBGA |
|
N25Q032A13ESEH0F TRMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 8SO |
|
70V9369L7PFI8Renesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
MTFC4GMVEA-1M WTMicron Technology |
IC FLASH 32GBIT MMC 153WFBGA |
|
AT28HC256-90LM/883-696Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |
|
93AA86BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
7024L35PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT28F640J3FS-115 GMETMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
AT49BV002ANT-70VIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
AS4C32M16MD1-5BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FPBGA |
